High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility
نویسندگان
چکیده
Abstract The industrialization of quantum dot light-emitting diodes (QLEDs) requires the use less hazardous cadmium-free dots, among which ZnSe-based blue and InP-based green red dots have received considerable attention. In comparison, development QLEDs is lagging behind. Here, we prepare InP/ZnSe/ZnS with a diameter 8.6 nm. We then modify InP emitting layer by passivation various alkyl diamines zinc halides, decreases electron mobility enhances hole transport. This, together optimizing transport layer, leads to 545 nm maximum efficiency (EQE) 16.3% current 57.5 cd/A. EQE approaches theoretical limit an emission yield 86%.
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ژورنال
عنوان ژورنال: Communications materials
سال: 2021
ISSN: ['2662-4443']
DOI: https://doi.org/10.1038/s43246-021-00203-5